| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS86140 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 100V | 11.2A (Ta) | 9.8 mOhm @ 11.2A, 10V | 4V @ 250µA | 41nC @ 10V | 2580pF @ 50V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| STP24NF10 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 100V | 26A (Tc) | 60 mOhm @ 12A, 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | 85W | Through Hole | TO-220-3 | |
| BSC205N10LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 45A | 20.5 mOhm @ 45A, 10V | 2.4V @ 43µA | 41nC @ 10V | 2900pF @ 50V | 76W | Surface Mount | 8-PowerTDFN | |
| PSMN020-100YS,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 43A (Tc) | 20.5 mOhm @ 15A, 10V | 4V @ 1mA | 41nC @ 10V | 2210pF @ 50V | 106W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| RJK1056DPB-00#J5 | RENESAS ELECTRONICS CORP | MOSFET N-Channel, Metal Oxide | 100V | 25A (Ta) | 14 mOhm @ 12.5A, 10V | - | 41nC @ 10V | 3000pF @ 10V | 65W | Surface Mount | SC-100, SOT-669 | |
| 2SJ655 | SANYO SEMICONDUCTOR CO LTD | MOSFET P-Channel, Metal Oxide | 100V | 12A (Ta) | 136 mOhm @ 6A, 10V | - | 41nC @ 10V | 2090pF @ 20V | 2W | Through Hole | TO-220-3 Full Pack | |
| STS4NF100 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 100V | 4A (Tc) | 70 mOhm @ 2A, 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF540 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 100V | 28A (Tc) | 77 mOhm @ 11A, 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | 85W | Through Hole | TO-220-3 |
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