MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No. of Pins:8; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 11.2A (Ta)
Rds On (Max) @ Id, Vgs 9.8 mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) @ Vds 2580pF @ 50V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 1262.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1262.7