| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP2047UCB4-7 | DIODES INC | MOSFET P-Channel, Metal Oxide | 20V | 4.1A (Ta) | 47 mOhm @ 1A, 4.5V | 1.2V @ 250µA | 2.3nC @ 4.5V | 218pF @ 10V | 1W | Surface Mount | 4-UFBGA | |
| DMN1033UCB4-7 | DIODES INC | 2 N-Channel (Dual) | 12V | 5.5A (Ta) | 26 mOhm @ 3A, 4.5V | 700mV @ 1mA | 37nC @ 4.5V | - | 1.45W | Surface Mount | 4-UFBGA | |
| SI8487DB-T1-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | - | 31 mOhm @ 2A, 10V | 1.2V @ 250µA | 80nC @ 10V | 2240pF @ 15V | - | Surface Mount | 4-UFBGA | |
| SI8439DB-T1-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 5.9A (Ta), 9.2A (Tc) | 25 mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 50nC @ 4.5V | - | - | Surface Mount | 4-UFBGA | |
| SI8812DB-T2-E1 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 20V | 2.3A (Ta) | 59 mOhm @ 1A, 4.5V | 1V @ 250µA | 17nC @ 8V | - | - | Surface Mount | 4-UFBGA | |
| SI8808DB-T2-E1 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 1.8A (Ta) | 95 mOhm @ 1A, 4.5V | 900mV @ 250µA | 10nC @ 8V | 330pF @ 15V | - | Surface Mount | 4-UFBGA | |
| SI8489EDB-T2-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 20V | 3.6A (Ta) | 44 mOhm @ 1.5A, 10V | 1.2V @ 250µA | 27nC @ 10V | 765pF @ 10V | 780mW | Surface Mount | 4-UFBGA |
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