FETs -Single, Arrays and Modules,20V,4.1A (Ta)
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 47 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds 218pF @ 10V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 4-UFBGA
Buying Option 1
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INR 353.8
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 353.8