MOSFET P-Channel, Metal Oxide,FET Type
14.5nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AON2409 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 30V 8A (Ta) 32 mOhm @ 8A, 10V 2.3V @ 250µA 14.5nC @ 10V 530pF @ 15V 2.8W Surface Mount 6-UDFN Exposed Pad
SI3879DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 4A (Ta), 5A (Tc) 70 mOhm @ 3.5A, 4.5V 1.5V @ 250µA 14.5nC @ 10V 480pF @ 10V 3.3W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3879DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 4A (Ta), 5A (Tc) 70 mOhm @ 3.5A, 4.5V 1.5V @ 250µA 14.5nC @ 10V 480pF @ 10V 3.3W Surface Mount 6-TSOP (0.065", 1.65mm Width)