Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs 70 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 14.5nC @ 10V
Input Capacitance (Ciss) @ Vds 480pF @ 10V
Power - Max 3.3W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)