| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSL211SP | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | |
| BSL211SPT | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | |
| BSL211SP L6327 | INFINEON TECHNOLOGIES AG | MOSFET P-Channel, Metal Oxide | 20V | 4.7A (Ta) | 67 mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | 2W | Surface Mount | SC-74, SOT-457 | |
| IRF7321D2TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7321D2PBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7321D2 | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7321D2TR | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 62 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| PMPB48EP,115 | NXP SEMICONDUCTORS | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 50 mOhm @ 4.7A, 10V | 2.5V @ 250µA | 26nC @ 10V | 860pF @ 15V | 1.7W | Surface Mount | 6-UDFN Exposed Pad | |
| PMN40UPE,115 | NXP SEMICONDUCTORS | MOSFET P-Channel, Metal Oxide | 20V | 4.7A (Ta) | 43 mOhm @ 3A, 4.5V | 700mV @ 250µA | 23nC @ 4.5V | 1820pF @ 10V | 500mW | Surface Mount | SC-74, SOT-457 | |
| SI3483DV-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4.7A (Ta) | 35 mOhm @ 6.2A, 10V | 3V @ 250µA | 35nC @ 10V | - | 1.14W | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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