MOSFET, P-CH, 20V, 4.7A, 6TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; Operating
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
Rds On (Max) @ Id, Vgs 67 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25µA
Gate Charge (Qg) @ Vgs 12.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 654pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case SC-74, SOT-457