MOSFET N-Channel, Metal Oxide,FET Type
20nC @ 10V,Gate Charge (Qg) @ Vgs
100W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK10E60W,S1VX TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 100W Through Hole TO-220-3
AUIRFR4292TRL INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 250V 9.3A (Tc) 345 mOhm @ 5.6A, 10V 5V @ 50µA 20nC @ 10V 705pF @ 25V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFU4292 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 250V 9.3A (Tc) 345 mOhm @ 5.6A, 10V 5V @ 50µA 20nC @ 10V 705pF @ 25V 100W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
AUIRFR4292 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 250V 9.3A (Tc) 345 mOhm @ 5.6A, 10V 5V @ 50µA 20nC @ 10V 705pF @ 25V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63