Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Rds On (Max) @ Id, Vgs 345 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 5V @ 50µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 705pF @ 25V
Power - Max 100W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA