MOSFET N-Channel, Metal Oxide,FET Type
7.2 mOhm @ 20A, 10V,Rds On (Max) @ Id, Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOT482L ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 80V 11A (Ta), 105A (Tc) 7.2 mOhm @ 20A, 10V 3.7V @ 250µA 81nC @ 10V 4870pF @ 40V 2.1W Through Hole TO-220-3
AOW482 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 80V 11A (Ta), 105A (Tc) 7.2 mOhm @ 20A, 10V 3.7V @ 250µA 81nC @ 10V 4870pF @ 40V 2.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK768R1-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 7.2 mOhm @ 20A, 10V 4V @ 1mA 24nC @ 10V 1730pF @ 25V 96W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTTFS4943NTAG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8A (Ta), 41A (Tc) 7.2 mOhm @ 20A, 10V 2.2V @ 250µA 20.4nC @ 10V 1386pF @ 15V 840mW Surface Mount 8-WDFN Exposed Pad
NTTFS4943NTWG ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 8A (Ta), 41A (Tc) 7.2 mOhm @ 20A, 10V 2.2V @ 250µA 20.4nC @ 10V 1386pF @ 15V 840mW Surface Mount 8-WDFN Exposed Pad
SIR804DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 60A (Tc) 7.2 mOhm @ 20A, 10V 3V @ 250µA 76nC @ 10V 2450pF @ 50V 104W Surface Mount PowerPAK® SO-8