MOSFET,N CH,W DIODE,100V,60A,PPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8; O
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 7.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 76nC @ 10V
Input Capacitance (Ciss) @ Vds 2450pF @ 50V
Power - Max 104W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8