| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPW20N60C3 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 208W | Through Hole | TO-247-3 | |
| SPW21N50C3 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 208W | Through Hole | TO-247-3 | |
| SPW20N60CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 208W | Through Hole | TO-247-3 | |
| IRFP3415PBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 150V | 43A (Tc) | 42 mOhm @ 22A, 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | 200W | Through Hole | TO-247-3 | |
| IRFP048RPBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 70A (Tc) | 18 mOhm @ 44A, 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | 190W | Through Hole | TO-247-3 | |
| IRFP048PBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 70A (Tc) | 18 mOhm @ 44A, 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | 190W | Through Hole | TO-247-3 |
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