10A,Current - Average Rectified (Io)
TO-220-2,Package / Case
88 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
CSD10030A CREE INC
Silicon Carbide Schottky 300V 10A 1.4V @ 10A No Recovery Time > 500mA (Io) 0ns 200µA @ 300V 660pF @ 0V, 1MHz 1.9°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
CSD06060A CREE INC
Silicon Carbide Schottky 600V 10A 1.8V @ 6A No Recovery Time > 500mA (Io) 0ns 200µA @ 600V 340pF @ 0V, 1MHz 1.8°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C3D10065A CREE INC
Silicon Carbide Schottky 650V 10A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 60µA @ 650V 480pF @ 0V, 1MHz 1.1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C3D10060A CREE INC
Silicon Carbide Schottky 600V 10A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 480pF @ 0V, 1MHz 1.1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C2D05120A CREE INC
Silicon Carbide Schottky 1200V (1.2kV) 10A 1.8V @ 5A No Recovery Time > 500mA (Io) 0ns 200µA @ 1200V 455pF @ 0V, 1MHz 1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
MBR1030 DIODES INC
Schottky 30V 10A 840mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 100µA @ 30V 400pF @ 4V, 1MHz 2.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
MBR1035 DIODES INC
Schottky 35V 10A 840mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 100µA @ 35V 400pF @ 4V, 1MHz 2.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
MBR1045 DIODES INC
Schottky 45V 10A 840mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 100µA @ 45V 400pF @ 4V, 1MHz 2.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
MBR1050 DIODES INC
Schottky 50V 10A 950mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 100µA @ 50V 400pF @ 4V, 1MHz 2.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
SBL1030 DIODES INC
Schottky 30V 10A 600mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 30V - 3.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2