CSD10030A |
CREE INC |
|
Silicon Carbide Schottky
|
300V
|
10A
|
1.4V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 300V
|
660pF @ 0V, 1MHz
|
1.9°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
CSD06060A |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
10A
|
1.8V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
340pF @ 0V, 1MHz
|
1.8°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C3D10065A |
CREE INC |
|
Silicon Carbide Schottky
|
650V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
480pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C3D10060A |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
480pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C2D05120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
1.8V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
455pF @ 0V, 1MHz
|
1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
MBR1030 |
DIODES INC |
|
Schottky
|
30V
|
10A
|
840mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 30V
|
400pF @ 4V, 1MHz
|
2.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR1035 |
DIODES INC |
|
Schottky
|
35V
|
10A
|
840mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 35V
|
400pF @ 4V, 1MHz
|
2.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR1045 |
DIODES INC |
|
Schottky
|
45V
|
10A
|
840mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 45V
|
400pF @ 4V, 1MHz
|
2.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR1050 |
DIODES INC |
|
Schottky
|
50V
|
10A
|
950mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 50V
|
400pF @ 4V, 1MHz
|
2.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL1030 |
DIODES INC |
|
Schottky
|
30V
|
10A
|
600mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 30V
|
-
|
3.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|