FM25CL64B-GA |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
64K (8K x 8)
|
16MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-SOIC (0.154", 3.90mm Width)
|
FM25L04B-GA |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
4K (512 x 8)
|
10MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-SOIC (0.154", 3.90mm Width)
|
FM25L04B-GATR |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
4K (512 x 8)
|
10MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-SOIC (0.154", 3.90mm Width)
|
FM25CL64B-GATR |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
64K (8K x 8)
|
16MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-SOIC (0.154", 3.90mm Width)
|
MR25H40CDF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40CDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40CDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40CDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR20H40DFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
50MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
8-VDFN Exposed Pad
|
MR20H40DF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
50MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
8-VDFN Exposed Pad
|