MR2A16ACYS35 |
EVERSPIN TECHNOLOGIES INC |
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RAM
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MRAM (Magnetoresistive RAM)
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4M (256K x 16)
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35ns
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Parallel
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3 V ~ 3.6 V
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-40?C ~ 85?C
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44-TSOP (0.400", 10.16mm Width)
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MR2A08ACYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
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4M (512K x 8)
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35ns
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Parallel
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3 V ~ 3.6 V
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-40?C ~ 85?C
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44-TSOP (0.400", 10.16mm Width)
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MR2A16ACMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
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Parallel
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3 V ~ 3.6 V
|
-40?C ~ 85?C
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48-LFBGA
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MR256A08BSO35 |
EVERSPIN TECHNOLOGIES INC |
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RAM
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MRAM (Magnetoresistive RAM)
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256K (32K x 8)
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35ns
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Parallel
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3 V ~ 3.6 V
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0?C ~ 70?C
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32-SOIC (0.295", 7.50mm Width)
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MR0A08BCSO35 |
EVERSPIN TECHNOLOGIES INC |
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RAM
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MRAM (Magnetoresistive RAM)
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1M (128K x 8)
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35ns
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Parallel
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3 V ~ 3.6 V
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-40?C ~ 85?C
|
32-SOIC (0.295", 7.50mm Width)
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MR4A16BYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
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16M (1M x 16)
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35ns
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Parallel
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3 V ~ 36 V
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0?C ~ 70?C
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54-TSOP (0.400", 10.16mm Width)
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MR4A16BCYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR25H256CDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
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SPI Serial
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2.7 V ~ 3.6 V
|
-40?C ~ 85?C
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8-TDFN Exposed Pad
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MR25H256CDF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
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SPI Serial
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2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
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MR256A08BYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
44-TSOP (0.400", 10.16mm Width)
|