AS6C4016-55BIN |
ALLIANCE MEMORY INC |
|
RAM
|
SRAM - Asynchronous
|
4M (256K x 16)
|
55ns
|
Parallel
|
2.7 V ~ 5.5 V
|
-40?C ~ 85?C
|
48-LFBGA
|
AS6C4016-55BINTR |
ALLIANCE MEMORY INC |
|
RAM
|
SRAM - Asynchronous
|
4M (256K x 16)
|
55ns
|
Parallel
|
2.7 V ~ 5.5 V
|
-40?C ~ 85?C
|
48-LFBGA
|
AS6C4016A-55BINTR |
ALLIANCE MEMORY INC |
|
RAM
|
SRAM - Asynchronous
|
4M (256K x 16)
|
55ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
AS6C4016A-55BIN |
ALLIANCE MEMORY INC |
|
RAM
|
SRAM - Asynchronous
|
4M (256K x 16)
|
55ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
MR2A16ACMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
MR2A16AMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR2A16ACMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
MR2A16AVMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|
MR2A16AMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR2A16AVMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|