Manufacture :NXP SEMICONDUCTORS
40nC @ 10V,Gate Charge (Qg) @ Vgs
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP030,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 30 mOhm @ 5A, 10V 2.8V @ 1mA 40nC @ 10V 770pF @ 24V 8.3W Surface Mount TO-261-4, TO-261AA
BUK7513-75B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 13 mOhm @ 25A, 10V 4V @ 1mA 40nC @ 10V 2644pF @ 25V 157W Through Hole TO-220-3
BUK7613-75B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A (Tc) 13 mOhm @ 25A, 10V 4V @ 1mA 40nC @ 10V 2644pF @ 25V 157W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN085-150K,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 150V 3.5A (Ta) 85 mOhm @ 3.5A, 10V 4V @ 1mA 40nC @ 10V 1310pF @ 25V 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
PSMN165-200K,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 2.9A (Ta) 165 mOhm @ 2.5A, 10V 4V @ 1mA 40nC @ 10V 1330pF @ 25V 3.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF530N,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 17A (Tc) 110 mOhm @ 9A, 10V 4V @ 1mA 40nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PHM15NQ20T,518 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 17.5A (Tc) 85 mOhm @ 15A, 10V 4V @ 1mA 40nC @ 10V 2170pF @ 30V 62.5W Surface Mount 8-VDFN Exposed Pad
PHP34NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 35A (Tc) 40 mOhm @ 17A, 10V 4V @ 1mA 40nC @ 10V 1700pF @ 25V 136W Through Hole TO-220-3
PHP75NQ08T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A (Tc) 13 mOhm @ 25A, 10V 4V @ 1mA 40nC @ 10V 1985pF @ 25V 157W Through Hole TO-220-3
PHX34NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 24.8A (Ta) 40 mOhm @ 17A, 10V 4V @ 1mA 40nC @ 10V 1700pF @ 25V 56.8W Through Hole TO-220-3 Isolated Tab