MOSFET, N CH, 30V, 10A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:8.3W; Transistor Case Style:SOT-223; No. of Pins:4; Operating Temper
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 30 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 770pF @ 24V
Power - Max 8.3W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA