Manufacture :NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide,FET Type
117nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN2R0-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 2.1 mOhm @ 15A, 10V 2.15V @ 1mA 117nC @ 10V 6810pF @ 12V 211W Through Hole TO-220-3
BUK7E04-40A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 4.5 mOhm @ 25A, 10V 4V @ 1mA 117nC @ 10V 5730pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7604-40A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 4.5 mOhm @ 25A, 10V 4V @ 1mA 117nC @ 10V 5730pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R0-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 2.1 mOhm @ 25A, 10V 2.15V @ 1mA 117nC @ 10V 6810pF @ 15V 211W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7504-40A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 4.5 mOhm @ 25A, 10V 4V @ 1mA 117nC @ 10V 5730pF @ 25V 300W Through Hole TO-220-3