Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 2.1 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 117nC @ 10V
Input Capacitance (Ciss) @ Vds 6810pF @ 12V
Power - Max 211W
Mounting Type Through Hole
Package / Case TO-220-3