| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK662R5-30C,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 100A | 2.8 mOhm @ 25A, 10V | 2.8V @ 1mA | 114nC @ 10V | 6960pF @ 25V | 204W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK7E3R5-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Ta) | 3.5 mOhm @ 25A, 10V | 4V @ 1mA | 114nC @ 10V | 8920pF @ 25V | 293W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK753R5-60E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Ta) | 3.5 mOhm @ 25A, 10V | 4V @ 1mA | 114nC @ 10V | 8920pF @ 25V | 293W | Through Hole | TO-220-3 | |
| BUK763R1-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Ta) | 3.1 mOhm @ 25A, 10V | 4V @ 1mA | 114nC @ 10V | 8920pF @ 25V | 293W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK653R3-30C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 100A (Tmb) | 3.3 mOhm @ 25A, 10V | 2.8V @ 1mA | 114nC @ 10V | 6960pF @ 25V | 204W | - | - | |
| BUK652R7-30C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 100A | 3.3 mOhm @ 25A, 10V | 2.8V @ 1mA | 114nC @ 10V | 6960pF @ 25V | 204W | Through Hole | TO-220-3 |
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