Manufacture :NXP SEMICONDUCTORS
-,Gate Charge (Qg) @ Vgs
120pF @ 25V,Input Capacitance (Ciss) @ Vds
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP126,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 375mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP126,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 375mA 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP130,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 350mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BS108,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BS108/01,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN254,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN254A,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN304,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 300mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSS87,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 400mA (Ta) 3 Ohm @ 400mA, 10V 2.8V @ 1mA - 120pF @ 25V 1W Surface Mount TO-243AA
BSP89,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 240V 375mA (Ta) 5 Ohm @ 340mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA