Manufacture :NXP SEMICONDUCTORS
-,Gate Charge (Qg) @ Vgs
TO-226-3, TO-92-3 (TO-226AA) Formed Leads,Package / Case
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BS108,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BS108/01,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 300mA (Ta) 5 Ohm @ 100mA, 2.8V 1.8V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN254,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN254A,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 250V 310mA (Ta) 5 Ohm @ 300mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSN304,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 300mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSP254A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 250V 200mA (Ta) 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSP304A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 170mA (Ta) 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 300mA (Tc) 5 Ohm @ 500mA, 10V 2V @ 1mA - 40pF @ 10V 830mW Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads