Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
86W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN015-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 50A 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 86W Through Hole TO-220-3
PSMN8R0-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tc) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W Through Hole TO-220-3
PSMN8R0-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tmb) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W - -
PSMN034-100BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 32A (Tmb) 34.5 mOhm @ 15A, 10V 4V @ 1mA 23.8nC @ 10V 1201pF @ 50V 86W - -
PSMN034-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 32A 34.5 mOhm @ 15A, 10V 4V @ 1mA 23.8nC @ 10V 1201pF @ 50V 86W Through Hole TO-220-3
PSMN015-60BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 50A (Tmb) 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 86W - -