Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
TO-247-3,Package / Case
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHW80NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 80A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 109nC @ 10V 4720pF @ 25V 263W Through Hole TO-247-3
PSMN009-100W,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A (Tc) 9 mOhm @ 25A, 10V 4V @ 1mA 214nC @ 10V 9000pF @ 25V 300W Through Hole TO-247-3
PSMN020-150W,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 150V 73A (Tc) 20 mOhm @ 25A, 10V 4V @ 1mA 227nC @ 10V 9537pF @ 25V 300W Through Hole TO-247-3
PSMN040-200W,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 50A (Tc) 40 mOhm @ 25A, 10V 4V @ 1mA 183nC @ 10V 9530pF @ 25V 300W Through Hole TO-247-3