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Manufacture :NXP SEMICONDUCTORS

2.8V @ 1mA,Vgs(th) (Max) @ Id

204W,Power - Max

10 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK6607-75C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 75V 100A 7 mOhm @ 25A, 10V 2.8V @ 1mA 123nC @ 10V 7600pF @ 25V 204W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK663R2-40C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 100A 3.2 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK664R4-55C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 4.9 mOhm @ 25A, 10V 2.8V @ 1mA 124nC @ 10V 7750pF @ 25V 204W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK653R4-40C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-220-3

BUK654R6-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 5.4 mOhm @ 25A, 10V 2.8V @ 1mA 124nC @ 10V 7750pF @ 25V 204W Through Hole TO-220-3

BUK6507-75C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 75V 100A 7.6 mOhm @ 25A, 10V 2.8V @ 1mA 123nC @ 10V 7600pF @ 25V 204W Through Hole TO-220-3

BUK662R5-30C,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 100A 2.8 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK6E3R4-40C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK653R3-30C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W - -

BUK652R7-30C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 100A 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Through Hole TO-220-3

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK6607-75C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	75V	100A	7 mOhm @ 25A, 10V	2.8V @ 1mA	123nC @ 10V	7600pF @ 25V	204W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK663R2-40C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	100A	3.2 mOhm @ 25A, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	204W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK664R4-55C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	4.9 mOhm @ 25A, 10V	2.8V @ 1mA	124nC @ 10V	7750pF @ 25V	204W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK653R4-40C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	100A	3.6 mOhm @ 25A, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	204W	Through Hole	TO-220-3
BUK654R6-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	5.4 mOhm @ 25A, 10V	2.8V @ 1mA	124nC @ 10V	7750pF @ 25V	204W	Through Hole	TO-220-3
BUK6507-75C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	75V	100A	7.6 mOhm @ 25A, 10V	2.8V @ 1mA	123nC @ 10V	7600pF @ 25V	204W	Through Hole	TO-220-3
BUK662R5-30C,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	100A	2.8 mOhm @ 25A, 10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	204W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK6E3R4-40C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	100A	3.6 mOhm @ 25A, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	204W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK653R3-30C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	100A (Tmb)	3.3 mOhm @ 25A, 10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	204W	-	-
BUK652R7-30C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	100A	3.3 mOhm @ 25A, 10V	2.8V @ 1mA	114nC @ 10V	6960pF @ 25V	204W	Through Hole	TO-220-3

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