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Manufacture :NXP SEMICONDUCTORS

2.8V @ 1mA,Vgs(th) (Max) @ Id

TO-220-3,Package / Case

16 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK6507-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 7 mOhm @ 25A, 10V 2.8V @ 1mA 82nC @ 10V 5160pF @ 25V 158W Through Hole TO-220-3

BUK6510-75C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 75V 77A 10.4 mOhm @ 25A, 10V 2.8V @ 1mA 81nC @ 10V 5251pF @ 25V 158W Through Hole TO-220-3

BUK653R7-30C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 100A 3.9 mOhm @ 25A, 10V 2.8V @ 1mA 78nC @ 10V 4707pF @ 25V 158W Through Hole TO-220-3

BUK653R4-40C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-220-3

BUK654R6-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 100A 5.4 mOhm @ 25A, 10V 2.8V @ 1mA 124nC @ 10V 7750pF @ 25V 204W Through Hole TO-220-3

BUK6507-75C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 75V 100A 7.6 mOhm @ 25A, 10V 2.8V @ 1mA 123nC @ 10V 7600pF @ 25V 204W Through Hole TO-220-3

BUK653R5-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 120A 3.9 mOhm @ 25A, 10V 2.8V @ 1mA 191nC @ 10V 11516pF @ 25V 263W Through Hole TO-220-3

BUK652R1-30C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A 2.4 mOhm @ 25A, 10V 2.8V @ 1mA 168nC @ 10V 10918pF @ 25V 263W Through Hole TO-220-3

BUK655R0-75C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 75V 120A 5.3 mOhm @ 25A, 10V 2.8V @ 1mA 177nC @ 10V 11400pF @ 25V 263W Through Hole TO-220-3

BUK653R2-55C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 55V 120A 3.2 mOhm @ 25A, 10V 2.8V @ 1mA 258nC @ 10V 15300pF @ 25V 306W Through Hole TO-220-3

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Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK6507-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	7 mOhm @ 25A, 10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	158W	Through Hole	TO-220-3
BUK6510-75C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	75V	77A	10.4 mOhm @ 25A, 10V	2.8V @ 1mA	81nC @ 10V	5251pF @ 25V	158W	Through Hole	TO-220-3
BUK653R7-30C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	100A	3.9 mOhm @ 25A, 10V	2.8V @ 1mA	78nC @ 10V	4707pF @ 25V	158W	Through Hole	TO-220-3
BUK653R4-40C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	100A	3.6 mOhm @ 25A, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	204W	Through Hole	TO-220-3
BUK654R6-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	100A	5.4 mOhm @ 25A, 10V	2.8V @ 1mA	124nC @ 10V	7750pF @ 25V	204W	Through Hole	TO-220-3
BUK6507-75C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	75V	100A	7.6 mOhm @ 25A, 10V	2.8V @ 1mA	123nC @ 10V	7600pF @ 25V	204W	Through Hole	TO-220-3
BUK653R5-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	120A	3.9 mOhm @ 25A, 10V	2.8V @ 1mA	191nC @ 10V	11516pF @ 25V	263W	Through Hole	TO-220-3
BUK652R1-30C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A	2.4 mOhm @ 25A, 10V	2.8V @ 1mA	168nC @ 10V	10918pF @ 25V	263W	Through Hole	TO-220-3
BUK655R0-75C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	75V	120A	5.3 mOhm @ 25A, 10V	2.8V @ 1mA	177nC @ 10V	11400pF @ 25V	263W	Through Hole	TO-220-3
BUK653R2-55C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	55V	120A	3.2 mOhm @ 25A, 10V	2.8V @ 1mA	258nC @ 10V	15300pF @ 25V	306W	Through Hole	TO-220-3

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