Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A
Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 82nC @ 10V
Input Capacitance (Ciss) @ Vds 5160pF @ 25V
Power - Max 158W
Mounting Type Through Hole
Package / Case TO-220-3