Manufacture :NXP SEMICONDUCTORS
75A,Current - Continuous Drain (Id) @ 25°C
2V @ 1mA,Vgs(th) (Max) @ Id
300W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9606-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9510-100B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 9.7 mOhm @ 25A, 10V 2V @ 1mA 86nC @ 5V 11045pF @ 25V 300W Through Hole TO-220-3
BUK952R8-30B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 2.4 mOhm @ 25A, 10V 2V @ 1mA 89nC @ 5V 10185pF @ 25V 300W Through Hole TO-220-3
BUK954R2-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 10220pF @ 25V 300W Through Hole TO-220-3
BUK9506-75B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 5.5 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 11693pF @ 25V 300W Through Hole TO-220-3
BUK9E06-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PHP191NQ06LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95.6nC @ 5V 7665pF @ 25V 300W Through Hole TO-220-3
BUK9504-40A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 4 mOhm @ 25A, 10V 2V @ 1mA 128nC @ 5V 8260pF @ 25V 300W Through Hole TO-220-3