Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 86nC @ 5V
Input Capacitance (Ciss) @ Vds 11045pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-220-3