Manufacture :NXP SEMICONDUCTORS
100V,Drain to Source Voltage (Vdss)
75A,Current - Continuous Drain (Id) @ 25°C
TO-220-3,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN015-100P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Through Hole TO-220-3
BUK9510-100B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 9.7 mOhm @ 25A, 10V 2V @ 1mA 86nC @ 5V 11045pF @ 25V 300W Through Hole TO-220-3
BUK7515-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 15 mOhm @ 25A, 10V 4V @ 1mA - 6000pF @ 25V 300W Through Hole TO-220-3
BUK7510-100B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 10 mOhm @ 25A, 10V 4V @ 1mA 80nC @ 10V 6773pF @ 25V 300W Through Hole TO-220-3
PSMN009-100P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 8.8 mOhm @ 25A, 10V 4V @ 1mA 156nC @ 10V 8250pF @ 25V 230W Through Hole TO-220-3