Manufacture :NXP SEMICONDUCTORS
100V,Drain to Source Voltage (Vdss)
182 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSS123,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 150mA 6 Ohm @ 120mA, 10V 2.8V @ 1mA - 40pF @ 25V 250mW Surface Mount TO-236-3, SC-59, SOT-23-3
PSMN013-100YSEX NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 82A 13 mOhm @ 20A, 10V 4V @ 1mA 16nC @ 10V 3775pF @ 50V 238W Surface Mount SC-100, SOT-669, 4-LFPAK
PSMN025-100D,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 47A 25 mOhm @ 25A, 10V 4V @ 1mA 61nC @ 10V 2600pF @ 25V 150W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9575-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 23A 72 mOhm @ 10A, 10V 2V @ 1mA - 1704pF @ 25V 98W Through Hole TO-220-3
PSMN013-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 68A (Tc) 13.9 mOhm @ 15A, 10V 4V @ 1mA 59nC @ 10V 3195pF @ 50V 170W Through Hole TO-220-3
PSMN016-100XS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 32.1A (Ta) 16 mOhm @ 10A, 10V 4V @ 1mA 46.2nC @ 10V 2404pF @ 50V 46.1W Through Hole TO-220-3 Isolated Tab
PSMN5R6-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A (Tc) 5.6 mOhm @ 25A, 10V 4V @ 1mA 141nC @ 10V 8061pF @ 50V 306W Through Hole TO-220-3
PSMN4R6-100XS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 70.4A (Tmb) 4.6 mOhm @ 15A, 10V 4V @ 1mA 153nC @ 10V 9900pF @ 50V 63.8W Through Hole TO-220-3 Isolated Tab
PHT4NQ10T,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 3.5A 250 mOhm @ 1.75A, 10V 4V @ 1mA 7.4nC @ 10V 300pF @ 25V 6.9W Surface Mount TO-261-4, TO-261AA
BUK7Y102-100B,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 15A (Tc) 102 mOhm @ 5A, 10V 4V @ 1mA 12.2nC @ 10V 779pF @ 25V 60W Surface Mount SC-100, SOT-669, 4-LFPAK