PSMN02 Series 100 V 25 mO N-Channel TrenchMOS SiliconMAX Level FET - TO-252-3
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 47A
Rds On (Max) @ Id, Vgs 25 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 61nC @ 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max 150W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63