SI4435DYPBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
20 mOhm @ 8A, 10V
|
1V @ 250µA
|
60nC @ 10V
|
2320pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4435DYTRPBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
20 mOhm @ 8A, 10V
|
1V @ 250µA
|
60nC @ 10V
|
2320pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4435DYTR |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
20 mOhm @ 8A, 10V
|
1V @ 250µA
|
60nC @ 10V
|
2320pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI4435DY |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
30V
|
8A (Tc)
|
20 mOhm @ 8A, 10V
|
1V @ 250µA
|
60nC @ 10V
|
2320pF @ 15V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|