Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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Manufacture :FAIRCHILD SEMICONDUCTOR CORP

300mV @ 500µA, 10mA,Vce Saturation (Max) @ Ib, Ic

20 @ 10mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce

300mW,Power - Max

8 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

FJN4301RTA FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN3301RTA FAIRCHILD SEMICONDUCTOR CORP

NPN 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

FJN4301RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

FJNS3201RTA FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 Short Body Formed Leads

FJNS3201RBU FAIRCHILD SEMICONDUCTOR CORP

NPN - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 Short Body

FJNS4201RTA FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 Short Body Formed Leads

FJNS4201RBU FAIRCHILD SEMICONDUCTOR CORP

PNP - Pre-Biased 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 200MHz Through Hole TO-226-3, TO-92-3 Short Body

FJN3301RBU FAIRCHILD SEMICONDUCTOR CORP

NPN 100mA 50V 300mV @ 500µA, 10mA - 20 @ 10mA, 5V 300mW 250MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
FJN4301RTA	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN3301RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
FJN4301RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
FJNS3201RTA	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 Short Body Formed Leads
FJNS3201RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 Short Body
FJNS4201RTA	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 Short Body Formed Leads
FJNS4201RBU	FAIRCHILD SEMICONDUCTOR CORP	PNP - Pre-Biased	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	200MHz	Through Hole	TO-226-3, TO-92-3 Short Body
FJN3301RBU	FAIRCHILD SEMICONDUCTOR CORP	NPN	100mA	50V	300mV @ 500µA, 10mA	-	20 @ 10mA, 5V	300mW	250MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)

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