Transistors - Bipolar (BJT) -Single & Arrays,PNP - Pre-Biased,300mW
Specification
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 5V
Power - Max 300mW
Frequency - Transition 200MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Buying Option 1
1
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INR 122
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 122