Part Numbers | Manufacturer Name | Datasheet | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
BC618,112 | NXP SEMICONDUCTORS | NPN - Darlington | 500mA | 55V | 1.1V @ 200µA, 200mA | 50µA | 10000 @ 200mA, 5V | 625mW | 155MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
BC618G | ON SEMICONDUCTOR | NPN - Darlington | 1A | 55V | 1.1V @ 200µA, 200mA | 50nA | 10000 @ 200mA, 5V | 625mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | |
BC618RL1 | ON SEMICONDUCTOR | NPN - Darlington | 1A | 55V | 1.1V @ 200µA, 200mA | 50nA | 10000 @ 200mA, 5V | 625mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
BC618RL1G | ON SEMICONDUCTOR | NPN - Darlington | 1A | 55V | 1.1V @ 200µA, 200mA | 50nA | 10000 @ 200mA, 5V | 625mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
BC618 | ON SEMICONDUCTOR | NPN - Darlington | 1A | 55V | 1.1V @ 200µA, 200mA | 50nA | 10000 @ 200mA, 5V | 625mW | 150MHz | Through Hole | TO-226-3, TO-92-3 (TO-226AA) |