Transistors - Bipolar (BJT) -Single & Arrays,NPN - Darlington,500mA,55V
Specification
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 55V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 200µA, 200mA
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 200mA, 5V
Power - Max 625mW
Frequency - Transition 155MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)