NPN,Transistor Type
125W,Power - Max
24 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BUJ105AB,118 NXP SEMICONDUCTORS
NPN 8A 400V 1V @ 800mA, 4A 100µA 13 @ 500mA, 5V 125W - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MJE4343G ON SEMICONDUCTOR
NPN 16A 160V 3.5V @ 2A, 16A 750µA 15 @ 8A, 2V 125W 1MHz Through Hole TO-247-3
TIP35CG ON SEMICONDUCTOR
NPN 25A 100V 4V @ 5A, 25A 1mA 15 @ 15A, 4V 125W 3MHz Through Hole TO-247-3
TIP35AG ON SEMICONDUCTOR
NPN 25A 60V 4V @ 5A, 25A 1mA 15 @ 15A, 4V 125W 3MHz Through Hole TO-247-3
TIPL765-S BOURNS INC
NPN 10A 400V 2.5V @ 2A, 10A 50µA 15 @ 500mA, 5V 125W 8MHz Through Hole TO-218-3
TIP35C ON SEMICONDUCTOR
NPN 25A 100V 4V @ 5A, 25A 1mA 15 @ 15A, 4V 125W 3MHz Through Hole TO-218-3
MJE18008 ON SEMICONDUCTOR
NPN 8A 450V 700mV @ 900mA, 4.5V 100µA 14 @ 1A, 5V 125W 13MHz Through Hole TO-220-3
MJE4343 ON SEMICONDUCTOR
NPN 16A 160V 3.5V @ 2A, 16A 750µA 15 @ 8A, 2V 125W 1MHz Through Hole TO-218-3
MJW21192 ON SEMICONDUCTOR
NPN 8A 150V 2V @ 1.6A, 8A 10µA 15 @ 4A, 2V 125W 4MHz Through Hole TO-247-3
MJW21192G ON SEMICONDUCTOR
NPN 8A 150V 2V @ 1.6A, 8A 10µA 15 @ 4A, 2V 125W 4MHz Through Hole TO-247-3