Transistors - Bipolar (BJT) -Single & Arrays,NPN,10A,400V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 400V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA, 5V
Power - Max 125W
Frequency - Transition 8MHz
Mounting Type Through Hole
Package / Case TO-218-3