1800pF @ 25V,Input Capacitance (Ciss) @ Vds
3.1W,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRL640STRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640STRRPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640S VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640L VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IRL640STRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640STRR VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 180 mOhm @ 10A, 5V 2V @ 250µA 66nC @ 5V 1800pF @ 25V 3.1W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB