Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 66nC @ 5V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB