| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQPF6N15 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 5A (Tc) | 600 mOhm @ 2.5A, 10V | 4V @ 250µA | 8.5nC @ 10V | 270pF @ 25V | 38W | Through Hole | TO-220-3 Full Pack | |
| FQP6N15 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 6.4A (Tc) | 600 mOhm @ 3.2A, 10V | 4V @ 250µA | 8.5nC @ 10V | 270pF @ 25V | 63W | Through Hole | TO-220-3 | |
| FQI6N15TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 6.4A (Tc) | 600 mOhm @ 3.2A, 10V | 4V @ 250µA | 8.5nC @ 10V | 270pF @ 25V | 3.75W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| FQB6N15TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 6.4A (Tc) | 600 mOhm @ 3.2A, 10V | 4V @ 250µA | 8.5nC @ 10V | 270pF @ 25V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRFD9014PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 1.1A (Ta) | 500 mOhm @ 660mA, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 1.3W | Through Hole | 4-DIP (0.300", 7.62mm) | |
| IRFR9310PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 400V | 1.8A (Tc) | 7 Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | 50W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRFU9310PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 400V | 1.8A (Tc) | 7 Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | 50W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | |
| IRFL9014PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 1.8A (Tc) | 500 mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 2W | Surface Mount | TO-261-4, TO-261AA | |
| IRFR9014PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IRF9Z10PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 6.7A (Tc) | 500 mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 43W | Through Hole | TO-220-3 |
© 2016 Copyright
