| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD60R1K4C6 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 28.4W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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