MOSFET, N-CH, 600V, 3.2A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:28.4W; Transistor Case Style:TO-252; No. of Pins:3; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) @ Vgs 9.4nC @ 10V
Input Capacitance (Ciss) @ Vds 200pF @ 100V
Power - Max 28.4W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63