8.1nC @ 4.5V,Gate Charge (Qg) @ Vgs
640pF @ 10V,Input Capacitance (Ciss) @ Vds
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SSM3J321T(TE85L,F) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 5.2A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SSM3J129TU(TE85L) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 4.6A (Ta) 46 mOhm @ 3A, 4.5V 1V @ 1mA 8.1nC @ 4.5V 640pF @ 10V 500mW Surface Mount 3-SMD, Flat Leads