2.2V @ 250µA,Vgs(th) (Max) @ Id
21nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSC080N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 14A (Ta), 53A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 21nC @ 10V 1700pF @ 15V 35W Surface Mount 8-PowerTDFN
BSZ088N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 40A (Tc) 8.8 mOhm @ 20A, 10V 2.2V @ 250µA 21nC @ 10V 1700pF @ 15V 35W Surface Mount 8-PowerTDFN
SIZ902DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) Asymmetrical 30V 14.3A, 16A 12 mOhm @ 13.8A, 10V 2.2V @ 250µA 21nC @ 10V 790pF @ 15V 4.2W, 5W Surface Mount 8-PowerWDFN
SIZ918DT-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 14.3A, 26A 12 mOhm @ 13.8A, 10V 2.2V @ 250µA 21nC @ 10V 790pF @ 15V 4.2W, 5.2W Surface Mount -