MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:35W; Transistor Case Style:PG-TSDSON; No. of Pins:8; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max 35W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN