40V,Drain to Source Voltage (Vdss)
21nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOD413A ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 40V 12A (Tc) 44 mOhm @ 12A, 10V 3V @ 250µA 21nC @ 10V 1125pF @ 20V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FDS4897AC FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 40V 6.1A, 5.2A 26 mOhm @ 6.1A, 10V 3V @ 250µA 21nC @ 10V 1055pF @ 20V 900mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS4885C FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 40V 7.5A, 6A 22 mOhm @ 7.5A, 10V 5V @ 250µA 21nC @ 10V 900pF @ 20V 900mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF5804TR INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 40V 2.5A (Ta) 198 mOhm @ 2.5A, 10V 3V @ 250µA 21nC @ 10V 680pF @ 25V 2W Surface Mount 6-TSOP (0.059", 1.50mm Width)
PSMN8R0-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tc) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W Through Hole TO-220-3
PSMN8R0-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 77A (Tmb) 7.6 mOhm @ 25A, 10V 4V @ 1mA 21nC @ 10V 1262pF @ 12V 86W - -
SI2319CDS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 40V 4.4A (Tc) 77 mOhm @ 3.1A, 10V 2.5V @ 250µA 21nC @ 10V 595pF @ 20V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3